Renowned Indian expert in the field of semiconductor technology visits UNN - Университет Лобачевского
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20 July 2017

From 10 to 14 July, Dr. Mahesh Kumar, renowned expert in the field of semiconductor technology from the Indian Institute of Technology in Jodhpur, visited Lobachevsky University. Dr. Kumar is a laureate of numerous prestigious awards for young scientists. During the visit, the results of joint work on the Indo-Russian research project "Investigation of ion-beam synthesis and properties of systems based on gallium nitride nanocrystals embedded in silicon-compatible matrices for applications in photodetectors and new-generation radiation sources" were discussed. The project was carried out jointly with the UNN PTRI and the UNN Faculty of Physics in the framework of the federal target program "Research and development in priority areas of Russia's scientific and technological complex development for 2014-2020.  From the Russian side, the project was managed by Prof. D.I. Tetelbaum, Leading Researcher of the UNN PTRI. This joint work has resulted in a prototype photodetector  based of thin oxide films containing nano-inclusions of gallium nitride. In the course of his visit, Dr. Kumar delivered a seminar where he presented the results of photosensitivity measurements of the obtained devices conducted by the Indian side. The participants of the discussion outlined their proposals on continuing cooperation to develop photodetectors and gas sensors based on semiconductor and oxide materials with the use of the UNN’s experimental facilities. Lobachevsky University looks forward to continuing joint research with Indian colleagues and obtaining new interesting results.