Home - News - Russia's first hybrid injection laser developed by IPM and UNN scientists

22 December 2016



A hybrid injection near infrared laser has been developed in the laboratories "Spectroscopy of solids" and "Physics of semiconductor heterostructures and superlattices" of the RAS Institute for Physics of Microstructures (IPM RAS) with the active participation of scientists from the UNN Physico-Technical Research Institute (PTRI). This device with an output power up to 0.75 W at a temperature of 300 K (less than 27 °C) in a pulsed mode is intended for optical connectors.
Such connectors will be used to solve the problem arising in supercomputers when trying to increase their performance. Wired links between different elements of the computing system produce a large amount of heat and require much energy for cooling the computer. The problem can be resolved by using light that can carry more data than a wire, and it takes less energy to transmit photons than electrons.
Through their joint efforts, researchers and engineers of IPM RAS and UNN Physico-Technical Research Institute succeeded in growing a high-quality structure based on gallium arsenide (InGaAs / GaAs) on silicon, and the hybrid laser was built on this structure. The work was performed in collaboration with scientists of the "Salut"  Scientific and Production Enterprise where the lasers were equipped with contacts, waveguides and mirrors. This achievement is an important step towards a new generation of microelectronics. The results were published in Applied Physics Letters, a journal of the American Institute of Physics.