Nanostructured material formation by ion implantation methods and investigation of their properties
NANOSTRUCTURES, NANOELECTRONICS AND NANOOPTICS:
- Nanostructured material formation by ion implantation methods and investigation of their properties.
Main results:
- Generation of nanostructured materials on the basis of thin oxide layers SiO2, Si1-xGexO2, Al2O3 with nanoinclusions of elementary and alloyed Si, SixGey, SixCy semiconductors by ion implantation of IV group elements. These materials have photoluminescence within the 300-1,200 nanometer spectrum range at room temperature.
- Discovery of electroluminescence in the range of wavelengths of 400-800 nanometers at room temperature and electric pumping power of ~0.1 W in ITO/SiO2:nc-Si/Si diod structures.
Leading expert:
-Professor David Tetelbaum, Sc.D. (Physics and Mathematics).
Main technological and research equipment:
- ILU-3 ion-beam unit (accelerating pressure – up to 40 kV, ion current – up to 1 mА);
- ILU-200 ion-beam unit (accelerating pressure – up to 160 kV, ion current – up to 0,5 мА) equipped with Princeton Gamma Tech spectroscopic system ( USA ) for X-ray energy-dispersion analysis of the kinetics of accumulation of impurities and defects in irradiated crystals;
- Modified units for molecular-beam, electron-beam and ion-plasma sedimentation of thin metal, semiconductor and dielectric films;
- A set of equipment for optical spectroscopy, including equipment for measuring photo- and electroluminescence with time resolution, optical transmission/absorption;
- A set of equipment for IR Fourier spectroscopy and Raman spectroscopy on the basis of instruments produced by Acton Research Corp., Stanford Research Systems, Janis Research, Varian;
- Agilent B1500A analyzer of parameters of semiconductor devices for measuring I-V and C-V characteristics.
Main partners:
-Institute of Physics of Microstructures of the Russian Academy of Sciences (N. Novgorod);
- Voronezh State University (Voronezh);
- Surface Phenomena Research Group, Scientific Enterprise (Moscow);
- Institute of Problems of Chemical Physics of the Russian Academy of Sciences (Chernogolovka);
- Middle East Technical University (Turkey);
- University of Trento (Italy);
- University of Oslo (Norway);
- Research Institute for Technical Physics and Materials Science (Hungary).
Key projects (sources of financing):
- FP6 program of the European Commission, SEMINANO project (subcontracts under contract NMP4-CT--2004-505285).
- Analytical departmental target program of the Federal Agency for Education «Development of scientific potential of higher educational institutions», project Nos.: 2.1.1.4022, 2.2.2.2.4737, 2.1.1.933, 2.1.1.3778.
Main publications:
- Properties of silicon nanocrystals formed and doped by the method of ion implantation in various oxide matrices / D.I. Tetelbaum, A.N. Mikhaylov, O.N. Gorshkov, А.P. Kasatkin, V.A. Burdov, А.V. Ershov, A.I. Belov, D.A. Kambarov, V.K. Vasiliev, A.I. Kovalev, D.L. Weinstein, D.М. Gaponov, R. Turan, S. Yerci, L. Pavesi, L. Ferraioli, T.G. Finstad, S. Foss // Nanotekhnika. – 2006. – No. 3. – pp.36-52.
- A.N. Mikhaylov, D.I. Tetelbaum, V.A. Burdov, O.N. Gorshkov, A.I. Belov, D.A. Kambarov, V.A. Belyakov, V.K. Vasiliev, A.I. Kovalev, D.M. Gaponova. Effect of ion doping with donor and acceptor impurities on intensity and lifetime of photoluminescence from SiO2 films with silicon quantum dots. J. Nanosci. Nanotechnol. – 2008. – Vol.8. – P.780-788.
- D. Wainstein, A. Kovalev, D. Tetelbaum, A. Mikhaylov, A. Belov. Investigations of SiC semiconductor nanoinclusions formed by sequential ion implantation and annealing in thermally oxidized Si. Surf. Interf. Anal. – 2008. – Vol.40, No.3-4. – P.571-574.
- D.I. Tetelbaum, A.N. Mikhailov, A.I. Belov, А.V. Ershov, Е.А. Pitirimova, S.М. Plankina, V.N. Smirnov, А.I.Kovalev, D.L. Wainstein, R. Turan, S. Yerci, T.G. Finstad, S. Foss. Properties of Al2O3: nc-Si nanostructures generated by ion implantation of silicon into sapphire and amorphous films of aluminium oxide. Fizika Tverdogo Tela – 2009. – V.51, No.2. – pp.385-392..
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