NANOSTRUCTURES, NANOELECTRONICS AND NANOOPTICS:

- Development and fabrication of nanostructured multipurpose semiconductors and dielectric materials and structures on their basis;
- Fabrication and investigation of complex epitaxial nano-heterostructures on the basis of А3В5 semiconductors;
- Fabrication and investigation of magnetic semiconductor nanostructures for spintronics;
- Fabrication and investigation of challenging nanostructured materials for planar optics and optoelectronics.

Main results:

Development of technology and launch of small-scale production of powerful near IR range (? = 0.92 - 1.15 microns) laser diodes on the basis of heterostructures with InGaAs/GaAs quantum wells. Development and production of, a two-frequency laser intended for difference frequency generation in the mid-IR range (? = 8–12 microns) on the basis of InGaAs/GaAs/InGaP structures;
- Generation of GaMnAs and InMnAs epitaxial layers by laser sputtering of solid-state targets. For the first time, the presence of anomalous Hall effect with a hysteresis loop in InMnAs has been demonstrated in these structures at room temperature. The structures provide the basis for creating a new class of semiconductor devices with operating parameters controlled by magnetic field;
- Development of Schottky diodes on the basis of heteronanostructures with a built-in InGaAs/GaAs quantum well in the area of spatial charge of the Schottky barrier and an adjacent ? -layer of Mn. Such structures can provide the basis for a new type of light-emitting diodes with radiation parameters controlled by magnetic field.

The leading expert:

- Dr. Boris Zvonkov, Sc.D. (Physics & Mathematics), the Leading Researcher.

Main technological and research equipment:

- An automated processing unit for MOS hydride epitaxy, including the module for target sputtering by a pulsed laser;
- An automated processing unit for MOS hydride epitaxy AIX200RF manufactured by AIXTRON (Germany);
- Automated units measuring photo- and electroluminescence spectra, photo voltage, and electrophysical parameters of structures at 77 and 300K;
- An automated unit measuring photo- and electroluminescence spectra and electrophysical parameters of structures in the range of temperatures of 10-300K. The unit combines a Janis cryostat and two CCD detectors capable of registering radiation in the range of 0.6-2.0 microns.

Main partners:

- Institute of Applied Physics of the Russian Academy of Sciences;
- Institute of Solid-State Physics of the Russian Academy of Sciences;
- Institute of Physics of Microstructures of the Russian Academy of Sciences;
- Ioffe Physical-Technical Institute of the Russian Academy of Sciences (St.-Petersburg).

Main customers:
- RFNC-VNIIEF;
- Sedakov NIIIS Federal Sate Unitary Enterprise.

Key projects (sources of financing):

- Projects of the U.S. Civilian Research and Development Foundation (CRDF): RUX0-001-NN/BF7M01 and BP4M01.
- Russian Foundation for Basic Research grants: 08-02-97038r_povolzhie_а, 08-02-00548а, 07-02-00486а.
- Analytical departmental target program of the Federal Agency for Education «Development of scientific potential of higher educational institutions», project Nos. 2.2.2.2.4297; 2.2.2.2.4737; 2.2.2.2.4297; 2.2.2.3.16006.

Main publications:

- B.N. Zvonkov, A.A. Biryukov, A.V. Ershov, S.M. Nekorkin, V.Ya. Aleshkin, V.I. Gavrilenko, A.A. Dubinov, K.V. Maremyanin, S.V. Morozov, A.A. Belyanin, V.V. Kocharovsky, Vl. V. Kocharovsky. Room-temperature intracavity difference-frequency generation in butt-joint diode lasers. Appl. Phys. Lett. – 2008. – V.92. – pp. 121-122.
- О.V. Vikhrova, Yu.А. Danilov, B.N. Zvonkov, А.V. Kudrin, V.V. Podolsky, Yu.N. Drozdov, М.V. Sapozhnikov, C. Moura, M.I. Vasilevskiy, М.P. Теmiryazeva. Ferromagnetism at room temperature in InMnAs layers. Fizika Tverdogo Tela. – 2008. - Vol.50, issue 1. - pp. 50-53.
- M.V. Dorokhin, Yu. A. Danilov, P.B. Demina, V.D. Kulakovskii, O.V. Vikhrova, S.V. Zaitsev, B.N. Zvonkov. Emission properties of InGaAs/GaAs heterostructures with delta -doped barrier. J. Phys. D. Appl. Phys. – 2008. – V.41. – P.245110.
- А.V. Zdoroveyshchev, P.B. Demina, B.N. Zvonkov. Peculiarities of morphology and photoluminescence spectra of quantum dot arrays of InAs/GaAs grown by the method gas-phase epitaxy method with periodic interruption of growth. Vestnik of the Nizhni Novgorod University . - 2008. - Vol.5. - pp.1-4.

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