Fabrication of multilayered Si and Si/Ge nanostructure, including alloyed rare-earth elements for micro- and optoelectronics, by molecular-beam epitraxy (MBE) method

NANOSTRUCTURES, NANOELECTRONICS AND NANOOPTICS:

- Fabrication of multilayered Si and Si/Ge nanostructure, including alloyed rare-earth elements for micro- and optoelectronics, by molecular-beam epitraxy (MBE) method.

Main results:

- Development of the combined MBE method of growing multilayered structures with submicron Si and Si1 XGeX:Er layers. Demonstration of the possibility of controllable growth of laser structures with an active Si1-XGeX :Er layer with Ge contents from 3 to 36 % and dSiGe thickness of ? 2.3 microns and erbium doping level of ? 3 ? 1018 сm3. The external quantum efficiency of light-emitting structures of Si/Si1 -XGeX:Er/Si reaches 0.16 % at T = 4,2 K and excitation power of 14 mW;
- Development of the method of growing epitaxial submicron silicon layers on sapphire substrates with the diameter of up to 100 mm by MBE method suitable for fabrication of integrated circuits (IC). According to the data of X-ray diffraction study, the width ??1/2 of the X-ray peak from the central part of the 0.3-micron thick Si (100) layer does not exceed 30 angular minutes. Surface roughness of silicon layer is no more than 10 %. Using such structures, development prototypes of integrated circuits have been fabricated.

The leading expert:

- Dr. Vladimir Shengurov, Sc.D. (Physics and Mathematics), the Leading Researcher.

Main technological and research equipment:

- Superhigh vacuum molecular-beam epitaxy units for growing structures on the basis of Si and Ge by a combined method with the use of solid-state and gas sources. The units have the necessary equipment for in situ monitoring of growth process (mass-spectrometers, IR-pyrometer). The structural parameters are monitored by means of electronography, atomic-force microscopy, X-ray diffraction, secondary-ion mass-spectroscopy, and photoluminescence.

Main partners:

- Institute of Applied Physics of the Russian Academy of Sciences;
- Institute of Solid-State Physics of the Russian Academy of Sciences;
- Institute of Physics of Microstructures of the Russian Academy of Sciences.

Main customers:
- Sedakov NIIIS FSUE.

Key projects (sources of financing):

- RFBR grants № 07-02-01304-а and № 08-02-01063-а.
-Analytical departmental target program of the Federal Agency for Education «Development of scientific potential of higher educational institutions», project Nos.: 2.1.1.1370, 2.2.2.4737, 2.1.1.3615, 2.1.1.3626.

Main publications:

- M.V. Stepikhova, L.V. Krasil'nikova, Z.F. Krasil'nik, V.G. Shengurov, V.Yu. Chalkov, D.M. Zhigunov, O.A. Shalygina, V.Yu. Timoshenko. Observation of the population inversion of erbium ion states in Si/Si1-xGex:Er/Si structures under optical excitation. Optical materials 2006, v.28, pp.893-896.
- S.A.Denisov, S.P.Svetlov, V.Yu.Chalkov, V.G.Shengurov, D.A.Pavlov, E.V.Korotkov, E.A.Pitirimova, V.N.Trushin. Structural perfection of heteroepitaxial silicon layers on sapphire grown by the method of sublimation molecular-beam epitaxy. Inorganic materials. – 2007. – V.43, 4. – pp.391- 398.
- D.O.Filatov, M.V.Kruglova, M.A.Isakov, S.V.Siprova, M.О.Marychev, V.G.Shengurov, V.Yu.Chalkov, S.A.Denisov. Photoluminescence of GeSi/Si nanoclusters formed during sublimation molecular-beam epitaxy in germanium environment.
- Fizika i Tekhnika Poluprovodnikov. – 2008. – V.42, issue 9. – pp.1116-1121.

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