Conference and school on ion implantation opens at UNN
The 9th All-Russian Conference and School “Physical and Physicochemical Fundamentals of Ion Implantation” opened at Lobachevsky University on 22 October. It is attended by representatives of Russia's leading universities and research organisations. Alexander Malyshev, Dean of the UNN Faculty of Physics, addressed the audience with a welcoming speech.
“Ion implantation as a field of research emerged in the 1950s and 1960s. It was rapidly developed into production and became one of the basic technologies of microelectronics. The first results were obtained here, in Nizhny Novgorod, at the Physics and Technology Research Institute together with the departments of our Faculty of Physics. This work continues to the present day. Currently, the government is trying to support knowledge-intensive industries, in particular, electronics. A number of programmes are being implemented for this purpose. For example, UNN participates in the Priority 2030 programme. The university is working in three areas. One of them is the development of novel components for electronics. Another strategic project within the Priority 2030 programme is aimed at the production of chemical components for microelectronics. The work of the UNN Advanced Engineering School is also related to electronics,” Alexander Malyshev noted in his speech.
The conference has had the national status for about 20 years and is held once every two years. It has several sections:
- “Fundamental problems of ion implantation”
- “Ion implantation and semiconductors”
- “Ion implantation in non-semiconducting materials”
- “Applications of ion implantation.”
For several days, scientists will share their experience and developments. A poster session is also scheduled as part of the conference. The conference and school will close on October 25.
