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Researchers of the UNN Faculty of Physics are studying the electronic and transport properties of planar graphene heterostructures, including a gap modification of graphene. This type of structures can be achieved by means of interaction of graphene with an inhomogeneous substrate consisting of alternating layers of silicon dioxide and hexagonal boron nitride. The research group has calculated for the first time the electron spectrum of a superlattice based on graphene with a spatially modulated gap, and the transport properties of one-dimensional multi-barrier structures of this type have been studied. The results of these studies can be applied to develop hardware components of graphene electronics and to create new nanoelectronic devices.