UNN researchers’ contribution to monograph on memristors
Two chapters prepared by a group of authors from Lobachevsky University have been published as part of a new collective monograph on Metal Oxides for Non-volatile Memory. The book was published by Elsevier and continues an extensive series of books on the methods of synthesis and various applications of metal oxides, edited by Gennady Korotchenkov, a leading scientist at the Moldova State University. It presents various approaches to the development and application of key non-volatile memory technologies based on metal oxides, both traditional (like Flash memory) and new technologies using the memristive effect. The latter approach combines various electron and ion transport mechanisms, segnetoelectric and magnetic phenomena, and enables the functionality of related materials and structures as elements of neuromorphic computing systems (artificial neurons and synapses).
"In this edition, the UNN team presented its results on the synthesis of mechanisms and models of resistive switching effect, as well as original data on multilevel information recording and synaptic plasticity of memristive devices. These results were obtained as part of a Russian-Greek project of the Russian Ministry of Science (the project was jointly implemented with the Kurchatov Institute), a Russian Science Foundation project, and a megagrant, which is being implemented at the UNN Laboratory of Stochastic Multistable Systems under the guidance of the leading researcher Bernardo Spagnolo," said Alexey Mikhailov, Head of the Laboratory of Physics and Technology of Thin Films at the UNN Research Institute of Physics and Technology, who is the lead author of the publication.
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