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A team of researchers from the Laboratory of Stochastic Multistable Systems at the UNN Research and Education Centre for Physics of Solid-State Nanostructures took part in the preparation of a special issue of the highly ranked journal "Chaos, Solitons & Fractals" (impact factor 9.922). The Laboratory was set up in accordance with the Agreement between the university and the Ministry of Education and Science of the Russian Federation in the framework of the megagrant project (2018-2022) headed by the leading Italian scientist, Professor Bernardo Spagnolo.  The special issue "Memristors and Nonequilibrium Stochastic Multistable Systems" (August 2022) includes 61 papers (of which 9 papers belong to the UNN Laboratory team). Mostly, these are extended versions of papers presented at the international conference "New Trends in Nonequilibrium Stochastic Multistable Systems and Memristors (NES2019)" held at the Ettore Majorana Centre for Scientific Culture in Erice (Trapani, Sicily, Italy) from October 18 to 21, 2019.

The main goals of this special issue are to promote new ideas, identify new trends and key innovations in a highly relevant and fruitful area of research and development related to memristive effect mechanisms, nanomaterials and memristor technologies for applications in Resistive Random Access Memory (RRAM) elements and new information and computing systems based on such elements. Considerable attention is paid to memristive neuromorphic systems that can provide significant (by orders of magnitude) improvement in performance and energy efficiency when solving complex computational problems.

A number of papers are also presented on the analysis of the chaotic behaviour of memristors and memristive neural networks, namely, metastable and discontinuous chaos, chaos synchronisation, and memristive hyperchaotic systems. Another group of papers in the special issue includes theoretical and experimental investigations of stochastic resistive switching dynamics and the role of external and internal thermal noise sources in memristors. In particular, new results are presented on the experimental observation in memristive systems of such well-known phenomena with a constructive role of noise as stochastic resonance and resonance activation.

These new observations open the way to a deeper understanding of the switching mechanism in memristive systems and, at the same time, to a wide range of applications where noise is used as a control parameter to improve the stability of electronic devices.