UNN scientists present their research results at international conference on memristors in Italy
From October 18 to October 21, the International Conference "New Trends in Nonequilibrium Stochastic Multistable Systems and Memristors - NES2019” was held in Italy. It was organized in the framework of the courses of the International Workshop Series on New Trends in Nonequilibrium Systems by well-known scientists Peter Hänggi and Fabio Marchesoni at the Ettore Majorana Science and Culture Center in Erice (Sicily). The event was held by the Laboratory for multistable stochastic systems (StoLab) of Lobachevsky University in collaboration with the University of Palermo under the mega grant of the Russian Federation Government (Agreement № 074-02-2018-330).
While fitting the general context of complex systems, metastability, and the constructive role of noise in nonlinear systems, the meeting focused on memristors. The Conference brought together leading experts (including Sergei Saveliev from the UK, Max Di Ventra and Yuri Pershin from the USA) and research groups working on the development of memristors as building blocks for quantum and neuromorphic computing. It was also addressed to scientists interested in the challenging problems connected with the dynamics of nonequilibrium multistable systems and memristor devices, from both theoretical and experimental point of view. The Conference became a discussion forum to promote new ideas in this promising research field, concerning stochastic nonlinear models, phase transitions phenomena in memristive devices, control of memory lifetime, and memcomputing.
Of particular interest to the event participants were invited talks by leading researchers from Germany, Italy, Spain, Greece, South Korea and Russia. The meeting culminated in a special section on the results obtained in the UNN StoLab laboratory. A large delegation from Lobachevsky University and its partner organizations demonstrated at the conference significant progress in the development and creation of new generations of electronic devices and neuromorphic artificial intelligence technologies based on memristive materials. It was achieved thanks to the original technological solutions and design variants for devices, new network architectures, and the positive role of both internal and external noise established by the researchers. Conference participants highly appreciated the contribution of the fast-growing Russian memristive community in this breakthrough research area and discussed plans for the following research activities under the StoLabproject.
